Zobrazeno 1 - 2
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pro vyhledávání: '"楊俊平"'
Autor:
Chun-Ping Yang, 楊俊平
93
This thesis reports an analysis of gate misalignment effect on capacitance behavior and threshold voltage of double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) NMOS device with N+/P+ poly Top/Bottom gate. In chapter 1, we make an
This thesis reports an analysis of gate misalignment effect on capacitance behavior and threshold voltage of double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) NMOS device with N+/P+ poly Top/Bottom gate. In chapter 1, we make an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/25891363581893421293
