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pro vyhledávání: '"林渼璇"'
Autor:
Mei-Hsuan Lin, 林渼璇
95
Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance. The recess in GaAs based HEMTs is done using wet chemical etching. On
Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance. The recess in GaAs based HEMTs is done using wet chemical etching. On
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/35228191465753344505
