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pro vyhledávání: '"林添義"'
Autor:
Tien-Yih Lin, 林添義
83
GaAs field effect transistors (FETs) utilizing multiple -dopig profiles grown by low-pressure metalorganic chemicalapor deposition (LP-MOCVD) have been fabricated successfully.e use different δ-doping periods and different arrangement of_-do
GaAs field effect transistors (FETs) utilizing multiple -dopig profiles grown by low-pressure metalorganic chemicalapor deposition (LP-MOCVD) have been fabricated successfully.e use different δ-doping periods and different arrangement of_-do
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50332572522776978625
