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Autor:
Ting-yen Lin, 林定言
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200-nm-thick HoScO3 films fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si, Cu(ReNx)/Ti/SiO2/Si and Cu(RuN¬x)/TaN/SiO2/Si stack structures have been characterized. The effect of post-annealing on the microstructures and electrical pro
200-nm-thick HoScO3 films fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si, Cu(ReNx)/Ti/SiO2/Si and Cu(RuN¬x)/TaN/SiO2/Si stack structures have been characterized. The effect of post-annealing on the microstructures and electrical pro
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40034132969852795154
