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pro vyhledávání: '"李珉澤"'
Autor:
Lee, Min-Tse, 李珉澤
102
Indium nitride (InN) with a narrow direct band gap has superior electronic transport properties to other group-III nitrides so that InN has become attractive for various applications such as high-frequency electronic devices, near-infrared o
Indium nitride (InN) with a narrow direct band gap has superior electronic transport properties to other group-III nitrides so that InN has become attractive for various applications such as high-frequency electronic devices, near-infrared o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/31256514510424364166
