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Autor:
Chen-Chin Lee, 李振欽
96
Carbon nanotube field-effect transistors (CNTFETs) have been considered as one of the candidates for nano-electronics applications in the future due to the excellent electrical characteristics. Conventional top-gate (TG) schottky barrier CNTF
Carbon nanotube field-effect transistors (CNTFETs) have been considered as one of the candidates for nano-electronics applications in the future due to the excellent electrical characteristics. Conventional top-gate (TG) schottky barrier CNTF
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/68115383971987334105
