Zobrazeno 1 - 3
of 3
pro vyhledávání: '"朱顺明 Zhu Shun-ming"'
Autor:
朱顺明 Zhu Shun-ming, 吴孔平 Wu Kong-Ping, 王智 Wang Zhi, 汤琨 Tang kun, 陈昌兆 Chen Cang-Zhao, 叶建东 Ye Jian-dong, 顾书林 Gu Shu-lin
Publikováno v:
Chinese Journal of Luminescence. 36:497-501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46dd5e292482032f95a0ba42bd288909
https://doi.org/10.3788/fgxb20153605.0497
https://doi.org/10.3788/fgxb20153605.0497
Autor:
郑有炓 Zheng You-dou, 顾然 Gu Ran, 顾书林 Gu Shu-lin, 朱顺明 Zhu Shun-ming, 朱振邦 Zhu Zhen-bang, 黄时敏 Huang Shi-min
Publikováno v:
Chinese Journal of Luminescence. 33:665-668
The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated.Despite the fact that both t-BuOH and H2O are of lower activity,the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor,due to its more e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9a4dced9bae34757a9cb27ee67ffe62
https://doi.org/10.3788/fgxb20123306.0665
https://doi.org/10.3788/fgxb20123306.0665
Autor:
郑有炓 Zheng You-dou, 顾然 Gu Ran, 朱顺明 Zhu Shun-ming, 叶建东 Ye Jian-dong, 顾书林 Gu Shu-lin, 朱振邦 Zhu Zhen-bang, 黄时敏 Huang Shi-min
Publikováno v:
Chinese Journal of Luminescence. 33:449-452
The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df6797ad169337825441a745f32ac96
https://doi.org/10.3788/fgxb20123304.0449
https://doi.org/10.3788/fgxb20123304.0449