Zobrazeno 1 - 7
of 7
pro vyhledávání: '"曾元宏"'
Autor:
Tseng, Yuan-Hung, 曾元宏
105
As the growing demand for power saving and carbon reduction, wide bandgap semiconductor materials are vastly discussed to be the next-generation power device. With a general reduction in power loss, devices made of wide bandgap semiconductor
As the growing demand for power saving and carbon reduction, wide bandgap semiconductor materials are vastly discussed to be the next-generation power device. With a general reduction in power loss, devices made of wide bandgap semiconductor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/75242979286958189512
Autor:
Tseng,Yuan-Hung, 曾元宏
104
For decades, scientists have been using means of biotechnology to solve the problem of food shortage due to world population explosion. Several Novel Biotech Foods had been created. Some of them are totally different from those created by na
For decades, scientists have been using means of biotechnology to solve the problem of food shortage due to world population explosion. Several Novel Biotech Foods had been created. Some of them are totally different from those created by na
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43340479517844159206
Autor:
Yung-Hung Tseng, 曾元宏
101
Frequency slice algorithm (FSA) is a new time-frequency analysis method, combining the frequency slice wavelet transform (FSWT) with an new idea of random decrement technique (RDT). First, use FSWT to demonstrate the signal in time and frequ
Frequency slice algorithm (FSA) is a new time-frequency analysis method, combining the frequency slice wavelet transform (FSWT) with an new idea of random decrement technique (RDT). First, use FSWT to demonstrate the signal in time and frequ
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/38405409250547048311
Autor:
Tseng, Yuan-Hong, 曾元宏
98
Carrier-trapping memory devices (eg., FLASH, SONOS etc.) have several inherent scaling limits, such as random dopant fluctuation, random telegraph noise, and minimum tunnel oxide thickness. In order to solve the problems above, a new type of
Carrier-trapping memory devices (eg., FLASH, SONOS etc.) have several inherent scaling limits, such as random dopant fluctuation, random telegraph noise, and minimum tunnel oxide thickness. In order to solve the problems above, a new type of
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/2zbu4q
Autor:
曾元宏
89
Microencapsulated phase-change materials (MCPCMs) were successfully prepared by three different processes ─ emulsion non-solvent addition method, in-situ polymerization and interfacial polycondensation. The process parameters ─ such as po
Microencapsulated phase-change materials (MCPCMs) were successfully prepared by three different processes ─ emulsion non-solvent addition method, in-situ polymerization and interfacial polycondensation. The process parameters ─ such as po
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/20023583688715920148
Publikováno v:
Taiwan Law Review; Apr2016, Issue 251, p165-188, 24p
