Zobrazeno 1 - 1
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pro vyhledávání: '"施伶宜"'
Autor:
Lin-Yi Shih, 施伶宜
105
In this study, indium metal was introduced as the electrode with HfO2-based of RRAM device. The device is fabricated as the structure of In/HfO2/TiN which produce characteristics of low operation voltage, low power consumption, high read mar
In this study, indium metal was introduced as the electrode with HfO2-based of RRAM device. The device is fabricated as the structure of In/HfO2/TiN which produce characteristics of low operation voltage, low power consumption, high read mar
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mzy455
