Zobrazeno 1 - 3
of 3
pro vyhledávání: '"戴 盈"'
Publikováno v:
Chinese Journal of Tissue Engineering Research / Zhongguo Zuzhi Gongcheng Yanjiu; 10/28/2018, Vol. 22 Issue 30, p4870-4875, 6p
Autor:
Ying-Fang Dai, 戴盈芳
98
In this thesis, two newly designed heterostructure field-effect transistor (HFETs), grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD), have been fabricated and investigated. First, an InGaP/GaAs camel-like gate n-channe
In this thesis, two newly designed heterostructure field-effect transistor (HFETs), grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD), have been fabricated and investigated. First, an InGaP/GaAs camel-like gate n-channe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/96852650778570642203
