Zobrazeno 1 - 4
of 4
pro vyhledávání: '"成能"'
Publikováno v:
Journal of Signal Processing; 2020, Vol. 36 Issue 1, p25-31, 7p
Publikováno v:
Journal of Data Acquisition & Processing / Shu Ju Cai Ji Yu Chu Li; Jan2020, Vol. 35 Issue 1, p118-127, 10p
Publikováno v:
Journal of Southern Agriculture; Apr2018, Vol. 49 Issue 4, p748-756, 9p
Autor:
江成能
96
In a conventional nonvolatile memory (NVM), charge is stored in a ploy-silicon floating gate (FG) surrounded by dielectrics. But, it will suffer some limitations for continued scaling of the device structure. Therefore, the nanocrystal nonvol
In a conventional nonvolatile memory (NVM), charge is stored in a ploy-silicon floating gate (FG) surrounded by dielectrics. But, it will suffer some limitations for continued scaling of the device structure. Therefore, the nanocrystal nonvol
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01961375117488554544
