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pro vyhledávání: '"彭辭修"'
Autor:
Tsu-Hsiu Perng, 彭辭修
93
The degradation induced by channel hot electron (CHE) and substrate hot electron (SHE) injection in nMOSFETs with ultrathin plasma nitrided gate dielectric was studied in this thesis. Compared to the conventional thermal oxide, the ultrathin
The degradation induced by channel hot electron (CHE) and substrate hot electron (SHE) injection in nMOSFETs with ultrathin plasma nitrided gate dielectric was studied in this thesis. Compared to the conventional thermal oxide, the ultrathin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/16163179669846707656
Autor:
Tsu-Hsiu Perng, 彭辭修
87
Interconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Using low dielectric constant material for the interlayer insulator is an effective way to solve the problem. We
Interconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Using low dielectric constant material for the interlayer insulator is an effective way to solve the problem. We
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11297947065504302295