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Autor:
Chin-Sheng Chang, 張錦昇
100
In this work, the reliability of the HfO2/SiO2 stacked structure with dielectrics prepared by nitric acid oxidation(NAO) at low temperature is investigated and discussed. Two material dielectrics of HfO2 and SiO2 are compared in this work. F
In this work, the reliability of the HfO2/SiO2 stacked structure with dielectrics prepared by nitric acid oxidation(NAO) at low temperature is investigated and discussed. Two material dielectrics of HfO2 and SiO2 are compared in this work. F
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00291874335707273512
