Zobrazeno 1 - 4
of 4
pro vyhledávání: '"張朝閔"'
Autor:
Chang, Chao-Min, 張朝閔
103
This purpose of this study is to explore the influence of “dynamic representation”or“static representation”on teaching.By supplementing or without sequential scaffolding problem to discover the influence on studnets’learning perfor
This purpose of this study is to explore the influence of “dynamic representation”or“static representation”on teaching.By supplementing or without sequential scaffolding problem to discover the influence on studnets’learning perfor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11478260118209823650
Autor:
Chao-Min Chang, 張朝閔
102
The payment system of Taiwan''s health insurance system still remain the current account of services case for hospitals (fee for service), but there are many experts recommend to pay by patient in order to avoid any malpractice by payment fo
The payment system of Taiwan''s health insurance system still remain the current account of services case for hospitals (fee for service), but there are many experts recommend to pay by patient in order to avoid any malpractice by payment fo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/b5a6mu
Autor:
CHANG CHAO MIN, 張朝閔
100
Bureau of National Health Insurance expanded medical benefits part of the special materials in order to mitigate the public health burden since December 1, 1995. This will reduce the burden on the people, however it has increased by insuranc
Bureau of National Health Insurance expanded medical benefits part of the special materials in order to mitigate the public health burden since December 1, 1995. This will reduce the burden on the people, however it has increased by insuranc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/37901611579695326135
Autor:
Chao-Min Chang, 張朝閔
97
This dissertation describes the material growth and characterization of InP-based heterojunction bipolar transistors (HBTs) with an InGaAsSb base layer, which have the advantages of low turn-on voltage and high current capability. High doping
This dissertation describes the material growth and characterization of InP-based heterojunction bipolar transistors (HBTs) with an InGaAsSb base layer, which have the advantages of low turn-on voltage and high current capability. High doping
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/49542107199907747562