Zobrazeno 1 - 2
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pro vyhledávání: '"张致铭"'
Publikováno v:
Journal of Mine Automation; Nov2022, Vol. 48 Issue 11, p80-100, 5p
Autor:
Chih-Ming Chang, 張致銘
94
In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a
In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01504884393492150557
