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pro vyhledávání: '"廖 珂"'
Publikováno v:
Machine Tool & Hydraulics; Aug2024, Vol. 52 Issue 15, p226-232, 7p
Publikováno v:
Arid Zone Research / Ganhanqu Yanjiu; Mar2024, Vol. 41 Issue 3, p480-489, 10p
Autor:
Ko-Fan,Liao, 廖珂汎
102
CMOSFET devices of 18 nanometers have been manufactured by using FinFET structure to achieve higher speeds of transferring signals and, in the mean time, to lower the consuming power. FinFET has gained the reputation because of its less leak
CMOSFET devices of 18 nanometers have been manufactured by using FinFET structure to achieve higher speeds of transferring signals and, in the mean time, to lower the consuming power. FinFET has gained the reputation because of its less leak
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85355695191563246719
