Zobrazeno 1 - 5
of 5
pro vyhledávání: '"应力阳"'
Publikováno v:
Journal of Clinical Pediatric Surgery; Oct2024, Vol. 23 Issue 10, p924-928, 5p
Publikováno v:
Journal of Clinical Pediatric Surgery. May2023, Vol. 22 Issue 5, p425-430. 6p.
Autor:
Yu-Jen Lee, 李祐任
98
Because of the progress of the technology of semiconductor and the Moore’s law, the size of devices is scaling down at every moment. The equivalent oxide thickness (EOT) will be 7.5Å in 2012 according to the expectation of ITRS. In this mo
Because of the progress of the technology of semiconductor and the Moore’s law, the size of devices is scaling down at every moment. The equivalent oxide thickness (EOT) will be 7.5Å in 2012 according to the expectation of ITRS. In this mo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/70763805321307181644
Autor:
Chih-Ching Wang, 王志慶
95
As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. Based on the International Technology Roadmap for Semiconductor (ITRS), the equivalent oxide thickness (EOT) should be 0.6 nm in
As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. Based on the International Technology Roadmap for Semiconductor (ITRS), the equivalent oxide thickness (EOT) should be 0.6 nm in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61001627123220536414
Publikováno v:
Journal of Clinical Pediatric Surgery; Aug2024, Vol. 23 Issue 8, p787-788, 2p