Výsledky vyhledávání - "埋め込みチャネルMOSキャパシタ"

埋め浴みチャネルMOSキャパシタの高周波C-V特性

Autor: 福山大学工学部電子・電気工学科, Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University

Publikováno v: 福山大学工学部紀要. 27:21-28

High-frequency capacitance-voltage (C-V) characteristics of a buried-channel, MOS capacitor have been analyzed. High-frequency capacitance of a buried-channel MOS capacitor that has a player at the surface of n substrate reaches a minimum value and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::2c77d3a2ced5a837e4c147005f8ea595
http://id.nii.ac.jp/1064/00008115/

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埋め込みチャネルMOSキャパシタのC-V特性

Autor: 福山大学工学部電子・電気工学科, Faculty of Engineering, Fukuyama University

Publikováno v: 福山大学工学部紀要. 25:1-6

High-frequency capacitance-voltage (C-V) characteristics of a buried-channel MOS capacitor have been measured and analyzed. The C-V characteristics, including transient behavior, of a buried-channel MOS capacitor that has a counter-doped p layer at t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::414fcd2e41cb186db813fa94d089956a
http://id.nii.ac.jp/1064/00008065/

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