Zobrazeno 1 - 3
of 3
pro vyhledávání: '"周帆 Zhou Fan"'
Autor:
张建华 Zhang Jian-hua, 张浩 Zhang Hao, 周帆 Zhou Fan, 林华平 Lin Hua-ping, 张志林 Zhang Zhi-lin, 李俊 Li Jun, 蒋雪茵 Jiang Xue-yin
Publikováno v:
Chinese Journal of Luminescence. 33:400-403
Indium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N2O plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer.Comparing with the conventional IGZO-TFT,the saturation mobility inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::218e9aef5717a62ca0deca55833cb905
https://doi.org/10.3788/fgxb20123304.0400
https://doi.org/10.3788/fgxb20123304.0400
Autor:
张良 Zhang Liang, 周帆 Zhou Fan, 张小文 Zhang Xiao-wen, 俞东斌 Yu Dong-bin, 蒋雪茵 Jiang Xue-yin, 张志林 Zhang Zhi-lin, 李俊 Li Jun, 林华平 Lin Hua-ping
Publikováno v:
Chinese Journal of Luminescence. 32:188-193
Bottom-gate ZnO thin-film transistors(ZnO-TFTs) were fabricated with Ta2O5 film as the insulator.Ta2O5 film was grown by the radio-frequency magnetron sputtering at room temperature.The thickness of the Ta2O5 layers were 100,85,60,40 nm separately.Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65de95bfe2383d30dd4d5a1b20a68988
https://doi.org/10.3788/fgxb20113202.0188
https://doi.org/10.3788/fgxb20113202.0188
Publikováno v:
Laser & Optoelectronics Progress. 53:100602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de4a1f7c498fae70367198e5f0ac8257
https://doi.org/10.3788/lop53.100602
https://doi.org/10.3788/lop53.100602