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pro vyhledávání: '"周培芬"'
Autor:
Pei-Fen Chou, 周培芬
81
Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the d
Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66125823962876064546
