Zobrazeno 1 - 2
of 2
pro vyhledávání: '"吳昌崙"'
Autor:
Wu Cheng Luen, 吳昌崙
82
In this thesis, a series of multi-?doped GaAs/InGaAs/GaAs heterostructure field effect transistors (HFETs) were grown by low-pressure metalogranic chemical vapor deposition. In addit- ion, we carried out SIMS profiles, PL mesurements, and Hal
In this thesis, a series of multi-?doped GaAs/InGaAs/GaAs heterostructure field effect transistors (HFETs) were grown by low-pressure metalogranic chemical vapor deposition. In addit- ion, we carried out SIMS profiles, PL mesurements, and Hal
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/32g675
Autor:
Chang-Luen Wu, 吳昌崙
84
Four-terminal MESFET and MODFET-like GaAs mutiple-function transistors (MFTs) with salient negative differential resistance (NDR) characteristics have been implemented by low- pressure metalorganic chemical vapor deposition (LP-MOCVD). The ve
Four-terminal MESFET and MODFET-like GaAs mutiple-function transistors (MFTs) with salient negative differential resistance (NDR) characteristics have been implemented by low- pressure metalorganic chemical vapor deposition (LP-MOCVD). The ve
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/aewxc8