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pro vyhledávání: '"劉政亨"'
Autor:
Cheng-Heng Liu, 劉政亨
95
This article focuses on “Floating Body Effect” of PD-SOI (partial depletion silicon-on-insulator), because the conventional PD-SOI 1T DRAM (one transistor of dynamic random access memory) cell can’t be held impact ionization produced ca
This article focuses on “Floating Body Effect” of PD-SOI (partial depletion silicon-on-insulator), because the conventional PD-SOI 1T DRAM (one transistor of dynamic random access memory) cell can’t be held impact ionization produced ca
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/x7dphn
