Zobrazeno 1 - 4
of 4
pro vyhledávání: '"インジウムガリウム砒素"'
Autor:
Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :28-32
In order to estimate a diffusion coefficient, an InAs mole fraction profile, which is obtained by numerical simulation, is compared with a profile, which is experimentally obtained. The simulation result agrees well with the experimentally obtained p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f296945a46de4b734e718b20f0729638
http://id.nii.ac.jp/1696/00002360/
http://id.nii.ac.jp/1696/00002360/
Autor:
Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :14-20
The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::cf5a9afe9c521eb40c144d96fb4533b0
http://id.nii.ac.jp/1696/00002358/
http://id.nii.ac.jp/1696/00002358/
Autor:
Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report.
We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ae13335f5c2ecaf4316a95e4f8b9449f
http://id.nii.ac.jp/1696/00002215/
http://id.nii.ac.jp/1696/00002215/
Publikováno v:
宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report.
For growing compositionally homogeneous alloy crystals, mass balance between segregation and transportation at the growth interface is required, that is, just the same amount of rejected solute by segregation should be transported away from the inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::220c14ba553e065ecbde72c7a3fbfc03
http://id.nii.ac.jp/1696/00002356/
http://id.nii.ac.jp/1696/00002356/