Zobrazeno 1 - 10
of 8 150
pro vyhledávání: '"•• Soulié"'
Autor:
Custódio, Tiago, Rebillard-Soulié, Alex, Bougault, Rémi, Gruyer, Diégo, Gulminelli, Francesca, Malik, Tuhin, Pais, Helena, Providência, Constança
We propose a Bayesian inference estimation of in-medium modification of the cluster self-energies from light nuclei multiplicities measured in selected samples of central $^{136,124}$Xe$+^{124,112}$Sn collisions with the INDRA apparatus. The data are
Externí odkaz:
http://arxiv.org/abs/2407.02307
Autor:
Soulié, Jean-Philippe, Sankaran, Kiroubanand, Van Troeye, Benoit, Leśniewska, Alicja, Pedreira, Olalla Varela, Oprins, Herman, Delie, Gilles, Fleischmann, Claudia, Boakes, Lizzie, Rolin, Cédric, Ragnarsson, Lars-Åke, Croes, Kristof, Park, Seongho, Swerts, Johan, Pourtois, Geoffrey, Tőkei, Zsolt, Adelmann, Christoph
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturizat
Externí odkaz:
http://arxiv.org/abs/2406.09106
Autor:
Soulié, Jean-Philippe, Sankaran, Kiroubanand, Pourtois, Geoffrey, Swerts, Johan, Tőkei, Zsolt, Adelmann, Christoph
Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive
Externí odkaz:
http://arxiv.org/abs/2405.02046
Autor:
Fable, Q., Baldesi, L., Barlini, S., Bonnet, Eric, Borderie, Bernard, Bougault, Remi, Camaiani, A., Casini, G., Chbihi, A., Ciampi, Caterina, Dueñas, J. A., Frankland, J. D., Genard, T., Gruyer, Diego D., Henri, Maxime, Hong, Byungsik, Kim, S., Kordyasz, A. J., Kozik, T., Fèvre, Arnaud Le, Neindre, Nicolas Le, Lombardo, Ivano, Lopez, Olivier, Marchi, T., Marini, Paola, Nam, S. H., Ono, Akira, Park, J., Pârlog, M., Piantelli, Silvia, Rebillard-Soulié, A, Verde, G., Vient, E.
Publikováno v:
Physical Review C, 109 (064605)
This article presents an investigation of isospin equilibration in cross-bombarding $^{40,48}$Ca$+^{40,48}$Ca reactions at 35 MeV/nucleon, by comparing experimental data with filtered transport model calculations. Isospin diffusion is studied using t
Externí odkaz:
http://arxiv.org/abs/2312.01763
Autor:
Lozano, Daniel Pérez, Soulié, Jean-Philippe, Hodges, Blake, Piao, Xiaoyu, O'Neal, Sabine, Valente-Feliciano, Anne-Marie, Herr, Quentin, Tőkei, Zsolt, Kim, Min-Soo, Herr, Anna
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS pro
Externí odkaz:
http://arxiv.org/abs/2311.09772
Autor:
Rebillard-Soulié, Alex, Bougault, Rémi, Pais, Helena, Borderie, Bernard, Chbihi, Abdelouahad, Ciampi, Caterina, Fable, Quentin, Frankland, John, Galichet, Emmanuelle, Génard, Tom, Gruyer, Diégo, Neindre, Nicolas Le, Lombardo, Ivano, Lopez, Olivier, Manduci, Loredana, Pârlog, Marian, Verde, Giuseppe
Heavy-ion collisions are a good tool to explore hot nuclear matter below saturation density. It has been established that if a nuclear system reaches the thermal and chemical equilibrium, this leads to scaling properties in the isotope production whe
Externí odkaz:
http://arxiv.org/abs/2311.05392
Autor:
Kawazumi, Nariya, Soulié, Arthur
We study the stable cohomology groups of the mapping class groups of surfaces with twisted coefficients given by the $d^{th}$ exterior powers of the first rational homology of the unit tangent bundles of the surfaces $\tilde{H}_{\mathbb{Q}}$. These c
Externí odkaz:
http://arxiv.org/abs/2311.01791
Autor:
Soulié, Jean-Philippe, Sankaran, Kiroubanand, Founta, Valeria, Opsomer, Karl, Detavernier, Christophe, Van de Vondel, Joris, Pourtois, Geoffrey, Tőkei, Zsolt, Swerts, Johan, Adelmann, Christoph
Publikováno v:
Microelectronic Engineering 286, 112141 (2024)
Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190{\deg}C, followed by recrys
Externí odkaz:
http://arxiv.org/abs/2310.20485