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Publikováno v:
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 5, Pp 12-17 (2022)
Pulsed laser deposition method was heterostructure GaP / Si. The methods of reducing the magnitude of the mechanical stresses in the resulting film, Raman scattering found that using the method of pulsed laser deposition at 300 °C for heterostructur
Externí odkaz:
https://doaj.org/article/331f6876c32748b9bcebe51de7fbda87
