Zobrazeno 1 - 10
of 63
pro vyhledávání: '"селенид галлия"'
Autor:
S. A. Bereznaya, D. A. Kobtsev, S. Yu. Sarkisov, R. A. Redkin, Z. V. Korotchenko, V. A. Novikov
Publikováno v:
Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fddbdfc3c45a29445f9d52abe77e8675
https://doi.org/10.1007/s11182-021-02198-5
https://doi.org/10.1007/s11182-021-02198-5
Autor:
R. A. Redkin, Sergey Yu. Sarkisov, V. A. Novikov, Yury S. Sarkisov, Timofei Mihaylov, S. A. Bereznaya, I. Kolesnikova, D. A. Kobtsev, Vladimir Voevodin
Publikováno v:
International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si substrates providing the highest optical contrast for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eecac54dfb97414b17d3bd712a3ca0f4
https://doi.org/10.1142/s0217979221502738
https://doi.org/10.1142/s0217979221502738
Важным элементом широкополосных лазерных спектрометров является нелинейно-оптический преобразователь излучения, допускающий перестр
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a05e987e506b79753b4d9e94a5427a
Autor:
I. A. Prudaev, A. N. Zarubin, Z. V. Korotchenko, S. A. Bereznaya, O. P. Tolbanov, S. Yu. Sarkisov, R. A. Redkin
Publikováno v:
Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and TiO2 layers on the surface of GaSe crack, while th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d4dbbfc4a31d214895c5da0da1f4926
https://doi.org/10.1007/s11182-015-0629-z
https://doi.org/10.1007/s11182-015-0629-z
Publikováno v:
Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::801bb53b96212f5f0342abfa8da5af17
https://doi.org/10.1134/s1063782615100061
https://doi.org/10.1134/s1063782615100061
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53779027470915ab60191ace30a8411e
https://doi.org/10.3103/s1062873815020161
https://doi.org/10.3103/s1062873815020161
Publikováno v:
Radio Electronics, Computer Science, Control; № 3 (2017): Radio Electronics, Computer Science, Control; 7-19
Радиоэлектроника, информатика, управление; № 3 (2017): Радиоэлектроника, информатика, управление; 7-19
Радіоелектроніка, iнформатика, управління; № 3 (2017): Радіоелектроніка, інформатика, управління; 7-19
Радиоэлектроника, информатика, управление; № 3 (2017): Радиоэлектроника, информатика, управление; 7-19
Радіоелектроніка, iнформатика, управління; № 3 (2017): Радіоелектроніка, інформатика, управління; 7-19
Context. The task for electric energy accumulation in non-electrochemical way but by means of electrons and spins was developed on the basis of quantum accumulators and spin capacitors. Synthesized clathrates of 4 folds expanded GaSe matrix with gues
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::4731d8fc16f422ab1abe9933b93fbd88
http://ric.zntu.edu.ua/article/view/114506
http://ric.zntu.edu.ua/article/view/114506
В данной работы мы проводили компьютерное моделирование спектроскопии инфракрасного поглощения и комбинационного рассеивания света в
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a10975816bf9d57ee08d2d06a35d85
Autor:
T. I. Izaak, Lei Zhang, Yu. M. Andreev, Konstantin A. Kokh, Jin Guo, Jijiang Xie, A. V. Shaiduko, Grigory V. Lanskii, Valerii A Svetlichnyi
Publikováno v:
Journal of materials science: materials in electronics. 2014. Vol. 25. P. 1757-1760
The paper reports a first growth of the Al-doped GaSe crystals by modified technology with heat field rotation. These crystals shown from 2 to 3 times lower absorption coefficient at the maximal transparency range to that in crystals grown by convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce78f9e0aa816d8148bcb18113aef65
https://doi.org/10.1007/s10854-014-1795-4
https://doi.org/10.1007/s10854-014-1795-4
Autor:
Zhi-Shu Feng, V. Atuchin, J. Y. Gao, Yu. M. Andreev, Zhi-Hui Kang, Jin Guo, Jijiang Xie, G. Lanskii, Lei Zhang, A. Shaiduko
Publikováno v:
Applied physics B: Lasers and optics. 2012. Vol. 108, № 3. P. 545-552
Centimeter-sized Te:GaSe (≤10 mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6de6aca9f7295e8b88c7854208e47c59
https://doi.org/10.1007/s00340-012-5067-9
https://doi.org/10.1007/s00340-012-5067-9