Модели параметров полупроводниковой структуры с p-n переходом основанные на применении функций Бесселя

Publikováno v: Electronics and Communications; Vol. 16 No. 3 (2011); 28-31
Электроника и Связь; Том 16 № 3 (2011); 28-31
Електроніка та Зв'язок; Том 16 № 3 (2011); 28-31

The models for informative electrophysical parameters determination in semiconductor structure with p-n junction were offered. These models take into account leakage current through a resistance that parallel p-n junction. The models were based on sm

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http://elc.kpi.ua/old/article/view/264209