Zobrazeno 1 - 3
of 3
pro vyhledávání: '"наноразмерный моп-транзистор"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 11-17 (2019)
A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechani
Externí odkaz:
https://doaj.org/article/5d0865fb937d481cb3d00d32941ef6ba
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 21-27 (2019)
Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct q
Externí odkaz:
https://doaj.org/article/898451cf7fd84dc3a7acd771d69738b2
Autor:
A. M. Borovik
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 1, Pp 12-17 (2019)
Using the methodology of screening experiments the most significant parameters of the Darwish mobility model are identified. The possibility of optimizing the drift-diffusion model in order to achieve the adequacy of the simulation results of nanosca
Externí odkaz:
https://doaj.org/article/867d262649f242db9dba45a3da1349f2