Zobrazeno 1 - 3
of 3
pro vyhledávání: '"лавинные S-диоды"'
Publikováno v:
Technical physics letters. 2018. Vol. 44, № 6. P. 465-468
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a5938db1a46895083d2af7f8496e1ba
https://doi.org/10.1134/s106378501806007x
https://doi.org/10.1134/s106378501806007x
Autor:
Oleinik, Vladimir L., Smirnova, Tatyana E., Kopyev, Viktor V., Verkholetov, Maksim G., Balzovsky, Evgeny V., Tolbanov, Oleg P., Prudaev, Ilya A.
Publikováno v:
IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made by diffusion of deep chromium and iron acceptors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3810::a172aa315518d875bb1e932b632d3956
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000651299
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000651299
Publikováno v:
Письма в журнал технической физики. 2018. Т. 44, вып. 11. С. 21-29
Представлены результаты исследования процессов переноса носителей заряда и перезарядки глубоких уровней в полупроводниковых структу
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a65462ecc19a9f079182626abd1ed36c
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000659335
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000659335