Параметри росту та якість плівки зародкового шару ZnO. Частина 2

Autor: Bogdan, A. V., Orlov, A. T., Ulianova, V. A.

Publikováno v: Electronics and Communications; Том 18, № 2 (2013); 16-21
Электроника и Связь; Том 18, № 2 (2013); 16-21
Електроніка та Зв'язок; Том 18, № 2 (2013); 16-21

The results of deposition of ZnO seed-layer on the silicon substrate, Al-coated silicon and Al-coated lithium niobate substrates by sol-gel method at sol concentration of 0,8 and 1,2 M were introduced. It was shown that film roughness and grain size

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::747a8aeef9ea08baf13815570fc770f9
http://elc.kpi.ua/old/article/view/173998