Zobrazeno 1 - 10
of 252
pro vyhledávání: '"ионная имплантация"'
Autor:
A. I. Bakhtin, A. V. Mukhametshin, O. N. Lopatin, V. F. Valeev, V. I. Nuzhdin, R. I. Khaibullin
Publikováno v:
Известия высших учебных заведений: Геология и разведка, Vol 63, Iss 5, Pp 57-66 (2021)
Background. High-dose implantation of cobalt ions into the crystal structure of natural colourless quartz was carried out. Samples of crystal plates of rock crystal from the Svetlinskoye deposit in the South Urals plane-parallel were studied. All sam
Externí odkaz:
https://doaj.org/article/a2113c7029ee4f9891ecdb590f881e88
Autor:
Риза Батырхановна Абылкалыкова, Людмила Иосифовна Квеглис, Бауржан Корабаевич Рахадилов, Гульсум Сафуановна Бектасова
Publikováno v:
Известия Алтайского государственного университета, Iss 4(108), Pp 11-17 (2019)
Исследованы продукты реакции, полученные при ионной имплантации азота, кислорода и фосфора в вольфрамовую мишень. Выяснены условия соз
Externí odkaz:
https://doaj.org/article/9f094ce1bbc8435ebc052b99c993a983
Autor:
M. G. Lukashevich
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 84-88 (2019)
Monocrystalline ZnO plane have been implanted by high dose (1,5·1017 cm-2) ions of manganese, iron, cobalt, nickel with energy of 40 keV at ion current density of 4 mA/cm2 in order to modified magnetic properties. Magnetic hysteresis loops at T = 5
Externí odkaz:
https://doaj.org/article/6ccd308c3a0145458a5e9534478baf49
Autor:
M.H. SERGEEVA, V.A. KOHANOVSKY
Publikováno v:
Вестник Донского государственного технического университета, Vol 8, Iss 2, Pp 192-196 (2018)
Nano level technologies for wear resistance increase were considered for Different materials: cemented carbides, high speed steels and polymer composites.
Externí odkaz:
https://doaj.org/article/7f2af6462323427fb3bfb5491a16f379
Autor:
Korolev, Dmitry, Tereshchenko, Alexey, Nikolskaya, Alena, Mikhaylov, Alexey, Belov, Alexey, Tetelbaum, David
The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d593796db167a79a31e18ec5983ba395
Publikováno v:
Известия высших учебных заведений. Физика. 2023. Т. 66, № 4. С. 134-137
Изучен метод глубокого ионного легирования материалов, основанного на синергии высокоинтенсивной имплантации и энергетического возде
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3810::f196343edee71da161ce385b7b364bf8
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001003973
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001003973
Цель данной работы - проведение анализа элементного и фазового состава поверхностных слоев титана, имплантированного ионами алюминия,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3992::c7f8a37c55512f49876bff8ac5b96b33
https://elib.belstu.by/handle/123456789/56341
https://elib.belstu.by/handle/123456789/56341
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Publikováno v:
Journal of surface investigation: x-ray, synchrotron and neutron techniques. 2020. Vol. 14, № 3. P. 516-524
The results of investigation of the surface physical and chemical properties of polylactic acid, hydroxyapatite and a composite material based on them taken in the ratio of components 80/20, modified by carbon ions with exposure doses of 1 × 10 15 a