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pro vyhledávání: '"аммиачная МЛЭ"'
In this paper, we present the results of the calculated and experimental dependence of photoluminescence on the excitation power density for GaN:Si layers grown by molecular beam epitaxy. A model was constructed for transitions in a compensated semic
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https://explore.openaire.eu/search/publication?articleId=doi_________::621684c6e8447ec0098a7a2ce65bf3d3
In this work the transformation kinetics of GaN pseudomorphic layer and the lattice constant evolution of 2D GaN “frozen” layer under sequential switching off/on of ammonia flow at a growth temperature of 740 °C were investigated by reflection h
Externí odkaz:
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