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pro vyhledávání: '"У.Т. Асатов"'
Publikováno v:
East European Journal of Physics, Iss 4 (2024)
In this work, the electrical and photoelectric properties of the near-surface and surface layers of silicon doped by diffusion with chromium atoms were investigated. The formation of an anomalous concentration of charge carriers in these regions, as
Externí odkaz:
https://doaj.org/article/8833d4910e5541a0bbfa877012f2c6d5
