Zobrazeno 1 - 2
of 2
pro vyhledávání: '"С-V характеристики"'
Publikováno v:
Микроэлектроника. 48:47-55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a39cbf479f498b1cc60119609008365
https://doi.org/10.1134/s0544126919010046
https://doi.org/10.1134/s0544126919010046
Autor:
Kuchkarov, В.H., Mamatkarimov, O.O.
The effect of ultrasonic action on the density of electronic states localized at the Si-glass interface is studied. A method is proposed for determining the surface and volume generation rates of charge carriers using the calculated time dependence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80b454bdea1cd502995a276fb120c2e
