Zobrazeno 1 - 10
of 235
pro vyhledávání: '"Квантовые точки"'
Autor:
Sergei Chebotarev, Adnan Mohamed, Marina Lunina, Igor Sysoev, Leonid Lunin, Aleksander Pashchenko, Lidiya Goncharova, Georgy Erimeev
Publikováno v:
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 1, Pp 13-20 (2022)
A model for the study of generation-recombination processes in the direct intermediate band photovoltaic nanostructures was proposed. The model allows to calculate the functional characteristics and the efficiency of solar radiation conversion. The n
Externí odkaz:
https://doaj.org/article/bcd7b80de61141198e964408147fbdc4
Autor:
Анастасия Александровна Исаева, Лина Викторовна Затонская, Павел Викторович Лыков, Владимир Петрович Смагин
Publikováno v:
Ползуновский вестник, Iss 2, Pp 212-217 (2021)
Ионы марганца (II) и меди (I, II) являются востребованными легирующими примесями, способными существенно модифицировать оптический спектр
Externí odkaz:
https://doaj.org/article/20107c50211b46fc9796264b7af9d839
Autor:
Stepanova, U. A., Muradova, A. G., Al-Mayyahi, H., Telminov, Evgenii N., Khakimov, K. T., Solodova, Tatyana A., Samsonova, Lyubov G.
Publikováno v:
Russian physics journal. 2022. Vol. 64, № 12. P. 2357-2363
Nanocomposites based on PMMA and CdSe, CdSe/CdS quantum dots were developed. Quantum dots (QD) of CdSe, CdSe/CdS with sizes from 2.0 nm to 4.0 nm were obtained by deposition in various media. The photoluminescence range for the obtained QDs was from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f106f5e07869d3ea920a88e5e96d3c42
https://doi.org/10.1007/s11182-022-02597-2
https://doi.org/10.1007/s11182-022-02597-2
Разработка тонкопленочных нанокомпозитов на основе ПММА и квантовых точек состава CdSe/CdS, CdSe/ZnS
Publikováno v:
Известия высших учебных заведений. Физика. 2023. Т. 66, № 2. С. 97-105
Получены квантовые точки CdSe, CdSe/CdS и CdSe/ZnS. Исследовано влияние толщины и типа оболочки на фото-люминесцентные свойства квантовых точек. О
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3810::d4d49013eb1d266f22ab16e83ee7ceb1
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997908
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997908
We used the photoluminescence spectra of a single InP/GaInP2 quantum dot with a Wigner–Seitz radius of about 3.4, doped with 4 electrons, to measure the magnetic field dispersion of single quantum states in a range between 0 and 10 T at 30 K. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a5351730cc540cde8a53a1e3e8e778
In this work the transformation kinetics of GaN pseudomorphic layer and the lattice constant evolution of 2D GaN “frozen” layer under sequential switching off/on of ammonia flow at a growth temperature of 740 °C were investigated by reflection h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2d6a18ab44e13f8302c0fb9bf89e8a
Autor:
Karaborchev, Aleksei, Makhov, Ivan, Maximov, Mikhail, Kryzhanovskaya, Natalia, Zhukov, Alexey
The paper reports on the implementation of two-level lasing in injection microlasers with self-organized InAs/GaAs quantum dots. Emission bands related to the radiative electron-hole recombination involving ground and several excited states of quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbb132b9a429561c44f53b9010ab004c
Autor:
Salii, Roman, Mintairov, Mikhail, Mintairov, Sergey, Nakhimovich, Maria, Shvarts, Maxim, Kalyuzhnyy, Nikolay
In this work, we studied the influence of GaP compensating layers on the characteristics of GaAs solar cells with InGaAs quantum dot arrays. An increase in the overall level of quantum efficiency in the absorption range of quantum dots (870–1000 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a27d36eac4312ceb39be0b053733841
Autor:
Victor Atuchin, Demid Abramkin
Publikováno v:
Nanomaterials; Volume 12; Issue 21; Pages: 3794
Nanomaterials. 2022. Vol. 12, № 21. P. 3794 (1-20)
Nanomaterials. 2022. Vol. 12, № 21. P. 3794 (1-20)
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac5325a3a2b0840cb3771a8c33f9e00c
В данном сообщении представлены результаты синтеза и изучения оптических свойств CdTe квантовых точек. Показано, что влияние продолжител
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca83a871fa059adbc23d76a3e2c77ac