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Autor:
Е.I. Suvorova, Philippe A. Buffat, G. B. Galiev, Imamov Rafik M, I. S. Vasil’evskii, Е.А. Klimov, Benjamin Dwir, S. S. Pushkarev
Publikováno v:
Journal of Crystal Growth. 366:55-60
Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps