Zobrazeno 1 - 1
of 1
pro vyhledávání: '"А.V. Bendak"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 3, Pp 273-276 (2018)
(Cu1–xAgx)7GeS5I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were investigated. The measurements of mechanical parameters
Externí odkaz:
https://doaj.org/article/479cc5edc5c14f93952680d9efdf4ca2
