Zobrazeno 1 - 1
of 1
pro vyhledávání: '"А.D. Tertyshnik"'
Autor:
А.V. Novikov, D. N. Lobanov, А.V. Goryunov, D. V. Yurasov, P. V. Volkov, А.D. Tertyshnik, М.V. Shaleev, А.Yu. Luk'yanov
Publikováno v:
Journal of Crystal Growth. 448:89-92
Differences in heating of silicon and silicon-on-insulator (SOI) substrates in molecular beam epitaxy were revealed by low-coherence tandem interferometry. Using this technique the interference effects which impede the correct evaluation of SOI subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a8e53faf724838c801709fbaed3b96
https://doi.org/10.1016/j.jcrysgro.2016.05.029
https://doi.org/10.1016/j.jcrysgro.2016.05.029
