Zobrazeno 1 - 3
of 3
pro vyhledávání: '"А. V. Voitsekhovskii"'
Publikováno v:
Russian Physics Journal. 57:345-358
Processes of formation of n + –n−–p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1–xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6448eaba3d07a5602f133126e18281
https://doi.org/10.1007/s11182-014-0246-2
https://doi.org/10.1007/s11182-014-0246-2
Autor:
N. Kh. Talipov, S. А. Shul’ga, V. G. Sredin, I. D. Burlakov, А. V. Voitsekhovskii, А. L. Sizov, K. O. Boltar
Publikováno v:
Russian Physics Journal. 56:882-889
The results of investigations into radiation modification of surfaces of Cd x Hg1-x Te (CMT) heteroepitaxial layers grown by molecular-beam and liquid-phase epitaxy (MBE- and LPE CMT HEL) affected by high-power pulse short-wavelength IR radiation are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce89dd50c396fb097974286c7f3b257b
https://doi.org/10.1007/s11182-013-0113-6
https://doi.org/10.1007/s11182-013-0113-6
Publikováno v:
Russian physics journal. 2015. Vol. 58, № 4. P. 540-551
Capacitance-voltage characteristics (CV characteristics) of MIS structures based on graded-gap MBE Hg 1–x Cd x Te (x = 0.22–0.23) with a two-layer plasma-chemical insulator SiO2/Si3N4 are studied under variation of the voltage sweep direction. Sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::453bfd814f53b8cf9e5cb74edf5225ec
https://openrepository.ru/article?id=791800
https://openrepository.ru/article?id=791800
