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pro vyhledávání: '"А.А. Ivanov"'
Секция 4. Формирование наноматериалов и наноструктур = Section 4. Formation of Nanomaterials and Nanostructures Проведены исследования тонких пленок, осажденных
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::2284d43eb9e4f704bc0c9a760b503ce3
http://elib.bsu.by/handle/123456789/233826
http://elib.bsu.by/handle/123456789/233826
Autor:
I. M. Shmyt’ko, V.V. Sirotkin, V. A. Tulin, А.А. Ivanov, I. Yu. Borisenko, A. N. Rossolenko, N.A. Tulina
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 33:3695-3704
We have been studying the dynamic effects of bipolar resistive switching (BERS) in memristive planar heterostructures based on c-oriented epitaxial films of the high-temperature superconductor YBa2Cu3O7 (YBCO). We have been observing the suppression
Autor:
А.А. Ivanov, A S Chermoshentseva
Publikováno v:
VIII МЕЖДУНАРОДНАЯ КОНФЕРЕНЦИЯ ПРОБЛЕМЫ МЕХАНИКИ СОВРЕМЕННЫХ МАШИН. Сборник статей конференции.
Publikováno v:
Aerospace and Environmental Medicine. 53:79-85
Publikováno v:
Aerospace and Environmental Medicine. 52:71-76
Publikováno v:
Aerospace and Environmental Medicine. 51:20-25
Autor:
I. M. Shmyt’ko, V.V. Sirotkin, A. N. Rossolenko, N.A. Tulina, А.М. Ionov, I. Yu. Borisenko, А.А. Ivanov
Publikováno v:
Physica C: Superconductivity and its Applications. 527:41-45
Reverse and stable bipolar resistive switching effect (BRSE) was observed in planar Nd 2 − x Ce x CuO 4 − y /Nd 2 − x Ce x O x /Ag heterostructure. It was shown that the СVС of the BRSE observed has a diode character. Simulations were used to
Autor:
А.А. Kosobryukhov, А.А. Ivanov
Publikováno v:
Book of proceedings of the All-Russian Scientific Conference with International Participation and Schools of Young Scientists "Mechanisms of resistance of plants and microorganisms to unfavorable environmental" (parts I, II).
Publikováno v:
Materials Letters. 136:404-406
We address bipolar resistive switching effects in structures based on oxides of transition metals which are promising for applications in modern memory devices. Mesoscopic niobium oxide film heterostrucures have been produced. The current–voltage c