Exciton Transfer Dynamics and Annihilation in Rubidium–Cesium-Alloyed, Quasi-Two-Dimensional Perovskite

Autor: Lamiaa Abdelrazik, Vidmantas Jašinskas, Žydrūnas Podlipskas, Ramūnas Aleksiejūnas, Gintautas Tamulaitis, Vidmantas Gulbinas, Aurimas Vyšniauskas

Publikováno v: Photonics, Vol 9, Iss 8, p 578 (2022)

Light-emitting diodes (LEDs) based on perovskite materials are a new group of devices that are currently undergoing rapid development. A significant fraction of these devices is based on quasi-2D perovskites fabricated with large organic cations. In

Externí odkaz: https://doaj.org/article/aa4e27ff135e4e63b84210ea28371d4f

Extreme radiation resistance in InN

Autor: Vitalij Kovalevskij, Žydrūnas Podlipskas, Gintautas Tamulaitis, Ramūnas Aleksiejūnas, Marek Kolenda, D. Dobrovolskas, Arūnas Kadys, J. Jurkevičius

Publikováno v: Journal of Alloys and Compounds. 789:48-55

Carrier dynamics were studied in InN, which is a promising material for radiation-resistant optoelectronic devices. InN epilayers with different background electron densities were prepared by metal-organic chemical vapor deposition and irradiated wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a352f057313b5dd76addd7b0a596b90a
https://doi.org/10.1016/j.jallcom.2019.03.108

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface

Autor: Saulius Miasojedovas, Tadas Malinauskas, Arūnas Kadys, J. Jurkevičius, Ramūnas Aleksiejūnas, Žydrūnas Podlipskas

Publikováno v: Scientific Reports
Scientific reports, London : Nature Publishing Group, 2019, vol. 9, art. no. 17346, p. [1-8]
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)

Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1384dd1312d56d966ac22a9b817e4961
https://pubmed.ncbi.nlm.nih.gov/31757996

Direct Auger recombination and density-dependent hole diffusion in InN

Autor: Žydrūnas Podlipskas, Arūnas Kadys, Saulius Nargelas, K. Nomeika, Marek Kolenda, Ramūnas Aleksiejūnas, Jūras Mickevičius, Gintautas Tamulaitis

Publikováno v: Scientific reports, London : Nature Publishing Group, 2018, vol. 8, art. no. 4621, p. [1-5]
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-5 (2018)

Indium nitride has a good potential for infrared optoelectronics, yet it suffers from fast nonradiative recombination, the true origin of which has not been established with certainty. The diffusion length of free carriers at high densities is not we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c18601be74a813f4f140887d29f0c6e9
https://repository.vu.lt/VU:ELABAPDB33694520&prefLang=en_US

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Autor: Arūnas Kadys, J. Jurkevičius, Maxim S. Shatalov, Ramūnas Aleksiejūnas, Gintautas Tamulaitis, R. Gaska, Michael Shur, J. Mickevičius, Žydrūnas Podlipskas, J. W. Yang

Publikováno v: Journal of Physics D: Applied Physics. 49:145110

Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The internal quantum efficiency (IQE) in the epilayers was obtained using two

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f47b4e547824eccd72fbd9d80ca577ec
https://doi.org/10.1088/0022-3727/49/14/145110