Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Žonja, Sanja"'
Publikováno v:
In Journal of Alloys and Compounds 25 January 2012 512(1):79-84
Publikováno v:
In Journal of Alloys and Compounds 2011 509(25):6999-7003
Autor:
Suligoj, Tomislav, Koričić, Marko, Poljak, Mirko, Žonja, Sanja, Knežević, Tihomir, Žilak, Josip
Development of a process design kit for gallium-nitride HEMTs. Analysis of DC and RF characteristics with respect to device scaling.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::a0ef4b76a23d27420c5a81c9674f4b26
https://www.bib.irb.hr/755489
https://www.bib.irb.hr/755489
XRD masurements are performed on the semiconductor devices with amorphous boron layers (PureB layers). Electrical simulations of the devices with PureB layers are performed and the emitter Gummel number is extracted from the simulations. Emitter Gumm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::0a2d9c8012ba55729629c110f328a588
https://www.bib.irb.hr/755479
https://www.bib.irb.hr/755479
Autor:
Žonja, Sanja
U radu su prikazana i analizirana svojstva visokodopiranih filmova polikristalnog silicija s primarnim ciljem razvoja grijaćeg, odnosno termoelektričnog elementa. Predstavljen je model rasta zrna iz amorfne faze koji za razliku od poznatih modela p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4b70dbac9ce82cfee957021b0bab36e8
https://repozitorij.fer.unizg.hr/islandora/object/fer:5581/datastream/PDF
https://repozitorij.fer.unizg.hr/islandora/object/fer:5581/datastream/PDF
Even in the metallic regime, heavily doped polycrystalline silicon has high thermopower, but since recently, due its high resistivity combined with high thermal conductivity, silicon was not considered as a possible thermoelectric material. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::f73201b0d1ed43a7f99cc491c12de4af
https://www.bib.irb.hr/590878
https://www.bib.irb.hr/590878
Two dimensional simulations of semiconductor p-i-n photodetectors are carried out with the main goal of reducing the junction capacitance in order to optimize device response time. The design of junction periphery is examined optimizing the distance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::56b57aa4c6b310d748079eb8a5be8bcf
https://www.bib.irb.hr/591274
https://www.bib.irb.hr/591274
In spite of enormous endeavors all over the world during the last 10 years ; from Kyoto's conference which initiated searching for the essentially improved thermoelectric working material ; We think that we are far from a material which has high Z va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::a863858b1424f411303a5420be0e6f9e
https://www.bib.irb.hr/547679
https://www.bib.irb.hr/547679
Autor:
Žonja, Sanja, Očko, Miroslav, Ivanda, Mile, Suligoj, Tomislav, Koričić, Marko, Biljanović, Petar
Until recently, the field of thermoelectrics marked silicon as an utterly poorly performing material. However, in the recent few years, due to development of the experimental methods that influenced the decrease of the grain size in the polycrystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::854e60da432f0d8a793dfb97602b81c2
https://www.bib.irb.hr/544903
https://www.bib.irb.hr/544903
Autor:
Žonja, Sanja, Ivanda, Mile, Očko, Miroslav, Suligoj, Tomislav, Koričić, Marko, Biljanović, Petar
In the last few years, silicon has drawn increased attention due to the possible application as thermoelectric material. In this paper we are presenting the results of the investigation on several heavily phosphorus doped polycrystalline silicon thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=57a035e5b1ae::409f65fc0011cd91fd93ddf894594a5f
https://www.bib.irb.hr/515332
https://www.bib.irb.hr/515332