Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Ž. Mozolová"'
Autor:
Tibor Lalinský, I. Hotový, M. Držík, Miroslav Husak, L. Matay, Gabriel Vanko, Vlastimil Řeháček, Ivan Kostic, Š. Haščík, Ž. Mozolová, Jiri Jakovenko, J. Chlpík
Publikováno v:
Sensors and Actuators A: Physical. 142:147-152
The micromachining technology and an electro-thermo-mechanical performance analysis of GaAs based micromachined thermal converter (MTC) device to be designed for metal oxide gas sensors are presented. MTC device introduced exhibits a low power consum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d7e5fb355fd225061c5937d8a17baf
https://doi.org/10.1016/j.sna.2007.05.014
https://doi.org/10.1016/j.sna.2007.05.014
Publikováno v:
Vacuum. 82:236-239
The GaAs/AlGaAs heterostructure layer system grown by MBE on GaAs substrate was designed to be used for micro-mechanical structure fabrication. In the first step, double-side aligned photolithography is carried out to define the etching masks on both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5a1872f1f8a7fa773b0cc416bf4dbb
https://doi.org/10.1016/j.vacuum.2007.07.011
https://doi.org/10.1016/j.vacuum.2007.07.011
Autor:
Ž. Mozolová, Peter Vogrinčič, Ivan Kostic, Frantisek Uherek, Š. Haščík, Tibor Lalinský, Andrej Vincze, Gabriel Vanko, Jozef Liday
Publikováno v:
Vacuum. 82:193-196
In this paper, we report on a novel Nb-Ti/Al/Ni/Au metallic system proposed to form ohmic contact to AlGaN/GaN heterostructure. The metallic system uses deposition of thin niobium layer as the first layer in contact with the AlGaN barrier layer befor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c83df16fe8d48c500c90dda3993723
https://doi.org/10.1016/j.vacuum.2007.07.020
https://doi.org/10.1016/j.vacuum.2007.07.020
Publikováno v:
Sensors and Actuators A: Physical. :99-105
Design and construction of GaAs-based micromachined thermal converter device consisting of a high electron mobility transistor (as a microwave heater) and a thin film resistor (as a temperature sensor), integrated on 1 μm thick polyimide fixed GaAs/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4ce89dd9c82f71024c0a30d830ccf4
https://doi.org/10.1016/j.sna.2005.04.027
https://doi.org/10.1016/j.sna.2005.04.027
Publikováno v:
Czechoslovak Journal of Physics. 54:C1001-C1005
GaAs micromachining technologies were used for fabricating polyimide-fixed thermally insulated GaAs Island structure. This structure, fully compatible with GaAs Heterostructure Field Effect Transistor (HFET) technology, was developed to be used for d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::774611edfa8c60c0bab5988ff4b7f658
https://doi.org/10.1007/bf03166521
https://doi.org/10.1007/bf03166521
Autor:
M. Krnac, Miroslav Husak, Š. Haščík, P. Hrkút, Tibor Lalinský, L. Matay, Ivan Kostic, Jiri Jakovenko, Ž. Mozolová
Publikováno v:
International Journal of Computational Engineering Science. :543-546
Design technology and characterization of new GaAs island based Micromechanical Thermal Converter (MTC) device are presented. The MTC device introduced consists of pHEMT as a microwave heater and thin film polySi/Ni resistor as a temperature sensor m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0540c4579f69e70764ca00040b55f4ef
https://doi.org/10.1142/s146587630300171x
https://doi.org/10.1142/s146587630300171x
Autor:
J. Škriniarová, M. Krnac, Tibor Lalinsky, Ž. Mozolová, L. Matay, Sˇ. Haščík, M. Tomáška, I. Kosticˇ, E. Burian, M. Drzˇík
Publikováno v:
Microelectronics International. 20:43-47
A new micromachining technology of mechanically fixed and thermally insulated cantilevers, bridges and islands was developed to be used for design of GaAs heterostructure based microelectromechanical systems (MEMS) devices. Based on the micromachinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b828f58ba4fe9a94621464bbf7c096
https://doi.org/10.1108/13565360310455526
https://doi.org/10.1108/13565360310455526
Publikováno v:
Vacuum. 69:283-287
GaAs micromachining technology was used for fabricating coplanar transmission lines on membrane-like AlGaAs/GaAs and InGaP/GaAs bridges. A front-side surface micromachining is combined with a back-side bulk GaAs micromachining. A double-side aligned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d7b3ad35397d4676bd24f913cc483f
https://doi.org/10.1016/s0042-207x(02)00346-9
https://doi.org/10.1016/s0042-207x(02)00346-9
Autor:
A Krajcer, M. Tomáška, Ž. Mozolová, Jan Kuzmik, T Kovac̆ik, A. Fox, Tibor Lalinský, Peter Kordos, Jaroslava Skriniarova, Stanislav Hasenöhrl
Publikováno v:
Scopus-Elsevier
The technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pseudomorphic HEMTs based on a very narrow InGaAs channel are presented. DC characterization in the temperature range between 300 and 77 K is performed to explain some anomalous e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41d29345f82aaca00a755e918bb9ccbb
https://doi.org/10.1016/s0042-207x(01)00275-5
https://doi.org/10.1016/s0042-207x(01)00275-5
Autor:
Ivan Kostic, Ž. Mozolová, M. Tomáška, Š. Haščík, Andrej Vincze, Gabriel Vanko, Tibor Lalinský, Ivan Rýger, Jaroslava Skriniarova
Publikováno v:
Vacuum. 84:235-237
Selective plasma treatment of an AlGaN/GaN heterostructure in the RF discharge of the electronegative SF 6 gas was studied. Shallow recess-gate etching of AlGaN (∼5 nm) was performed in CCl 4 plasma through a photoresist mask. Subsequently, recess-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e336a7b2473b4eafeaf4570d2dce0f13
https://doi.org/10.1016/j.vacuum.2009.04.032
https://doi.org/10.1016/j.vacuum.2009.04.032