Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Ž. Gačević"'
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097217-097217-7 (2015)
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but
Externí odkaz:
https://doaj.org/article/6d4a809cd268465890e487ee443f8b6a
Autor:
V. Braza, T. Ben, S. Flores, D.F. Reyes, A. Gallego-Carro, L. Stanojević, Ž. Gačević, N. Ruíz-Marín, J.M. Ulloa, D. González
Publikováno v:
Applied Surface Science. 604:154596
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98b7aa0bd9ef7ef561128835aca6077
https://doi.org/10.1016/j.apsusc.2022.154596
https://doi.org/10.1016/j.apsusc.2022.154596
Autor:
Pavel Aseev, E. Calleja, J.J. Jiménez, Richard Nötzel, Francisco M. Morales, Rafael García, Ž. Gačević, P. E. D. Soto Rodriguez, José Manuel
Publikováno v:
Journal of Alloys and Compounds. 783:697-708
The main results of a complete study by Transmission and Scanning-Transmission Electron Microscopies ((S)TEM) are described for (i) InGaN/Si (111) heterostructures in the whole compositional range of the alloys, and (ii) InN quantum dots (InN QDs) di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36af6766babc1eef7e0f8e37e656cbbb
https://doi.org/10.1016/j.jallcom.2018.12.319
https://doi.org/10.1016/j.jallcom.2018.12.319
Autor:
Pavel Aseev, Mahabul Islam, E. Calleja, Rafael García, Piu Rajak, Ž. Gačević, José Manuel, Francisco M. Morales, Somnath Bhattacharyya, J.J. Jiménez
Publikováno v:
Nanoscale. 11:13632-13638
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB-stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the deter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24da270982cbe733d66b6cc6d32391c9
https://doi.org/10.1039/c9nr04146j
https://doi.org/10.1039/c9nr04146j
Publikováno v:
Nanotechnology. 32(19)
Self-assembled AlN nanowires (NWs) are grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c41a6d320a987f2d078c3bec1c97d83c
https://pubmed.ncbi.nlm.nih.gov/33535196
https://pubmed.ncbi.nlm.nih.gov/33535196
Autor:
Pavel Aseev, E. Calleja, José Manuel, J.J. Jiménez, Francisco M. Morales, Ž. Gačević, Rafael García
Publikováno v:
Journal of Crystal Growth. 493:65-75
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f252ae3a00ff37cd5008d522b35f79f7
https://doi.org/10.1016/j.jcrysgro.2018.04.027
https://doi.org/10.1016/j.jcrysgro.2018.04.027
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil-shaped apex is analyzed by electron tomography using high-angle annular dark-field mode in a scanning transmission electron microscope. Selective area grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82d35a0644fc9afc9b26943dbae37e63
http://europepmc.org/articles/PMC6626086
http://europepmc.org/articles/PMC6626086
Autor:
Nenad Vukmirović, Ž. Gačević
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb46d1560c84d74cd650e46883e44fb
https://doi.org/10.1117/12.2508021
https://doi.org/10.1117/12.2508021
Autor:
P.E.D. Soto-Rodríguez, Pavel Aseev, Miguel Sanchez-Garcia, Ž. Gačević, E. Calleja, Victor J. Gómez, Richard Nötzel
Publikováno v:
Journal of Crystal Growth. 447:48-54
This work presents a comparative study, based mainly on X-ray diffraction analysis, of compact (~100 nm thick) and uniform single crystal InGaN layers (In content
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f755bdd8c19f792257b29467f5ce8d
https://doi.org/10.1016/j.jcrysgro.2016.04.007
https://doi.org/10.1016/j.jcrysgro.2016.04.007
Autor:
I. Artacho, JM José Maria Ulloa, A. D. Utrilla, Ž. Gačević, David González, Adrian Hierro, Teresa Ben, D.F. Reyes, A. Guzmán
Publikováno v:
Solar Energy Materials And Solar Cells, ISSN 0927-0248, 2016-01, Vol. 144
Archivo Digital UPM
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Archivo Digital UPM
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The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investigated for their application in solar cell devices. We demonstrate the ability to combine strain-balancing techniques with band engineering approaches
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a0536d74d9e4e71309d0ac4936f885e
https://doi.org/10.1016/j.solmat.2015.08.009
https://doi.org/10.1016/j.solmat.2015.08.009