Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Štefan Haščík"'
Autor:
Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, Róbert Kúdela
Publikováno v:
Materials, Vol 14, Iss 13, p 3461 (2021)
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As cha
Externí odkaz:
https://doaj.org/article/d37aae93acfa4b47bd36251c079aff0f
Autor:
Peter Šichman, Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Milan Ťapajna, Boris Hudec, Štefan Haščík, Tamotsu Hashizume, Aleš Chvála, Alexander Šatka, Ján Kuzmík
Publikováno v:
physica status solidi (a).
Publikováno v:
Journal of Electrical Engineering. 62:363-366
Development and Fabrication of TiO2Tip Arrays for Gas SensingTitanium oxide thin films were deposited at room temperature by reactive magnetron sputtering in a mixture of oxygen and argon on oxidized silicon substrates. The optimal etching characteri
Autor:
Dagmar Gregušová, Lajos Tóth, Ondrej Pohorelec, Stanislav Hasenöhrl, Štefan Haščík, Ildikó Cora, Zsolt Fogarassy, Roman Stoklas, Alena Seifertová, Michal Blaho, Agáta Laurenčíková, Tatsuya Oyobiki, Béla Pécz, Tamotsu Hashizume, Ján Kuzmík
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p