Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Štefan Chromik"'
Autor:
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2837 (2023)
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char
Externí odkaz:
https://doaj.org/article/599297df99194f91b0d35d267721607d
Autor:
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 1, Pp n/a-n/a (2023)
Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H‐SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1
Externí odkaz:
https://doaj.org/article/beba597e3a5747f7aa7169b6c82d0d34
Autor:
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::090c0736ba7bae092b2cc4be95a81e62
https://hdl.handle.net/10447/579401
https://hdl.handle.net/10447/579401
