Zobrazeno 1 - 10
of 174
pro vyhledávání: '"Šilėnas, A."'
Autor:
Fedorenko, L. a, ⁎, Silenas, A. b, Havryliuk, O. c, Strilchuk, O. a, Yukhymchuk, V. a, Soloviev, E. a, Korchovyi, A. a, Sirmulis, E. b
Publikováno v:
In Thin Solid Films 1 September 2019 685:34-39
Autor:
Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, Algirdas Sužiedėlis
Publikováno v:
Sensors, Vol 21, Iss 13, p 4487 (2021)
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-in
Externí odkaz:
https://doaj.org/article/a769fd168cdd448196a446a2496016ee
Akademický článek
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Autor:
Jonas Gradauskas, Steponas Ašmontas, Algirdas Sužiedėlis, Aldis Šilėnas, Viktoras Vaičikauskas, Aurimas Čerškus, Edmundas Širmulis, Ovidijus Žalys, Oleksandr Masalskyi
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7483 (2020)
In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the different
Externí odkaz:
https://doaj.org/article/7cc17516151d4f38bb8f8d8a810eb222
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Publikováno v:
Sensors, Vol 20, Iss 3, p 829 (2020)
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above differe
Externí odkaz:
https://doaj.org/article/250a8e097a564424af52c65a3de54473
Akademický článek
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Autor:
Putinas Kalinauskas, Laurynas Staišiūnas, Asta Grigucevičienė, Konstantinas Leinartas, Aldis Šilėnas, Dalia Bučinskienė, Eimutis Juzeliūnas
Publikováno v:
Materials; Volume 16; Issue 7; Pages: 2785
A photoelectrode for hydrogen evolution reaction (HER) is proposed, which is based on p-type silicon (p-Si) passivated with an ultrathin (10 nm) alumina (Al2O3) layer and modified with microformations of a nickel catalyst. The Al2O3 layer was formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c8b2fcb8255759c112f1321b59aa7db
https://doi.org/10.3390/ma16072785
https://doi.org/10.3390/ma16072785
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 147-149 (2014)
Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfort
Externí odkaz:
https://doaj.org/article/4106d09657d349e3b9d061fb1cfc812b
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 135-137 (2014)
The THz radiation reflection, absorption and emission spectra of conductive n-GaAs/air surface are considered. The influence of thermostimulated surface plasmon-phonon (SPP) polariton oscillations on THz radiation reflection, absorption and emission
Externí odkaz:
https://doaj.org/article/7541fb4096ff46e2afeae78b90343cfb
Autor:
Silenas, Aldis a, ⁎, Miller, Albert b, Pozela, Juras a, Pozela, Karolis a, Dapkus, Leonas a, Juciene, Vida a
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2011 633 Supplement 1:S62-S64