Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Š. Haščík"'
Autor:
J. Kuzmík, A. Adikimenakis, M. Ťapajna, D. Gregušová, Š. Haščík, E. Dobročka, K. Tsagaraki, R. Stoklas, A. Georgakilas
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125325-125325-5 (2021)
Further progress of information technologies is hampered by the limited operational speed and frequency of contemporary electronic devices. Consequently, there is an intense quest for materials with the highest electron velocity. Over a decade, InN h
Externí odkaz:
https://doaj.org/article/0ee6aafd45834f4ab68d2de0624de590
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Karol Fröhlich, Dagmar Gregušová, Jan Kuzmik, M. Gregor, Stanislav Hasenöhrl, E. Brytavskyi, Š. Haščík, Roman Stoklas, M. Ťapajna
Publikováno v:
Applied Surface Science. 461:255-259
The impact of oxidation agent and post-metallization annealing (PMA) on the quality of oxide-semiconductor interface in AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistors (MOS-HFETs) with HfO2 grown by atomic layer depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c8b4da2da0df062c51f60af4d103ed
https://doi.org/10.1016/j.apsusc.2018.05.191
https://doi.org/10.1016/j.apsusc.2018.05.191
Autor:
Stanislav Hasenöhrl, Jan Kuzmik, Juraj Marek, Alexander Satka, Š. Haščík, Roman Stoklas, Peter Sichman, A. Vincze, J. Priesol, Edmund Dobročka, Ales Chvala, F. Gucmann
Publikováno v:
Materials Science in Semiconductor Processing. 118:105203
Samples comprising 1.3 μm-thick C-doped semi-insulating (SI) GaN layer sandwiched between two n-GaN layers were grown on sapphire or conductive GaN substrates by metal-organic chemical vapor phase epitaxy at varied reactor pressure between 100 and 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5364d4ef962a105e339a6a544e9f89d
https://doi.org/10.1016/j.mssp.2020.105203
https://doi.org/10.1016/j.mssp.2020.105203
Autor:
Jan Kuzmik, O. Pohorelec, M. Ťapajna, Š. Haščík, Lajos Tóth, Béla Pécz, Stanislav Hasenöhrl, Roman Stoklas, F. Gucmann, A. Seifertová, Dagmar Gregušová
Publikováno v:
Applied Surface Science. 528:146824
Polarization engineering is a promising approach to achieve high positive threshold voltage (Vth) in GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS HEMTs). In this paper, we investigate all critical interfaces of polariza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc252c7d3ecba1c1f1b81443d4d758d4
https://doi.org/10.1016/j.apsusc.2020.146824
https://doi.org/10.1016/j.apsusc.2020.146824
Autor:
Karol Fröhlich, Š. Haščík, Dagmar Gregušová, M. Jurkovič, Nicolas Grandjean, J.-F. Carlin, M. Ťapajna, M. Blaho, J. Dérer, Jan Kuzmik
Publikováno v:
physica status solidi (a). 212:1086-1090
Self-aligned normally-off n(++)GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 degrees C so th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f46d8ca5cd5b01061a9979de383eadf
https://doi.org/10.1002/pssa.201431588
https://doi.org/10.1002/pssa.201431588
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Michél Simon-Najasek, Helmut Jung, Jan Kuzmik, Š. Haščík, Jan Grünenpütt, Frank Altmann, Andreas Graff, T. Baur, Dagmar Gregušová, Hervé Blanck
A low ohmic contact resistance is a key request on AlGaN/GaN HEMT devices especially when dealing with higher frequency applications. In such a GaN material system very high annealing temperatures of up to 900 °C are frequently necessary to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0fa2b99296cab1e0ba01f2b2d8e43ee
https://publica.fraunhofer.de/handle/publica/253655
https://publica.fraunhofer.de/handle/publica/253655
Autor:
Š. Haščík, Alexandros Georgakilas, A. Adikimenakis, Jan Kuzmik, Clément Fleury, Maria Androulidaki, Michal Kučera, Edmund Dobročka, Dionyz Pogany, Dagmar Gregušová, Róbert Kúdela, M. Ťapajna
Publikováno v:
Applied Physics Letters
Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae90fc661e3c98592949109d9e85cd07
Publikováno v:
Applied Surface Science. 312:107-111
Titanium oxide thin films were deposited at room temperature by reactive magnetron sputtering in a mixture of oxygen and argon on oxidized silicon substrates. The optimal etching characteristics of TiO2 films by an inductively coupled plasma system w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917e06550f27b06d5d38274f9110ace6
https://doi.org/10.1016/j.apsusc.2014.03.174
https://doi.org/10.1016/j.apsusc.2014.03.174