Zobrazeno 1 - 10 of 263 pro vyhledávání: '"Şemsettin Altındal"'
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Akademický článek
Machine learning approach for predicting electrical features of Schottky structures with graphene and ZnTiO3 nanostructures doped in PVP interfacial layer
Autor: Ali Barkhordari, Hamid Reza Mashayekhi, Pari Amiri, Süleyman Özçelik, Şemsettin Altındal, Yashar Azizian-Kalandaragh
Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-18 (2023)
Abstract In this research, for some different Schottky type structures with and without a nanocomposite interfacial layer, the current–voltage (I–V) characteristics have been investigated by using different Machine Learning (ML) algorithms to pre
Externí odkaz: https://doaj.org/article/1ff287148b964e93b455609ce0fc633d
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3
Akademický článek
Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode
Autor: Elif Orhan, Aslıhan Anter, Murat Ulusoy, Barış Polat, Can Okuyucu, Mustafa Yıldız, Şemsettin Altındal
Publikováno v: Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or syn
Externí odkaz: https://doaj.org/article/3a980eecfa894ac88b4ba7d702bbd758
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4
Akademický článek
Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval
Autor: Serhat Orkun Tan, Osman Çiçek, Çağrı Gökhan Türk, Şemsettin Altındal
Publikováno v: Engineering Science and Technology, an International Journal, Vol 27, Iss , Pp 101017- (2022)
The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (σac), dielectric (ε′ and ε′′) and electric modulus (M' and M'') components of the Al/Al2O3/p-Si type
Externí odkaz: https://doaj.org/article/8a916ac6d5a74553974d9c234bf39143
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6
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
Autor: Haziret Durmuş, Adem Tataroğlu, Şemsettin Altındal, Mert Yıldırım
Publikováno v: Current Applied Physics. 44:85-89
© 2022 Korean Physical SocietySchottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for highe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8407a59df29da412cb034c93fc84276
https://doi.org/10.1016/j.cap.2022.09.015
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