Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Şadan Özden"'
Publikováno v:
Düzce Üniversitesi Bilim ve Teknoloji Dergisi, Vol 9, Iss 1, Pp 202-214 (2021)
Bu çalışmada, nematik fazdaki 4-propoxy-biphenyl-4-carbonitrile’in sıcaklığa bağlı dielektrik geçirgenliğinin ölçümleri raporlanmıştır. Bu amaçla 1 kHz ila 1MHz frekans aralığında sıcaklığa bağlı dielektrik karakterizasyonu
Externí odkaz:
https://doaj.org/article/0c413864bb064230b5b46f943528033b
Publikováno v:
International Journal of Photoenergy, Vol 2016 (2016)
Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80–
Externí odkaz:
https://doaj.org/article/195272e61fe64af58871c650fa8d3b71
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:27688-27697
The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters of the device such as rectifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a20edb98fd2132ffe2acc884554e4eff
https://doi.org/10.1007/s10854-021-07150-4
https://doi.org/10.1007/s10854-021-07150-4
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.In this work, we report photodiode behavior on metal polymer semiconductor device with photopolymer interfacial layer for the first time.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca61b1984cdc4f651bf6e5a0e1d83c3e
https://avesis.kayseri.edu.tr/publication/details/766ef1dd-bb9c-4100-add4-b0fb0f6025a5/oai
https://avesis.kayseri.edu.tr/publication/details/766ef1dd-bb9c-4100-add4-b0fb0f6025a5/oai
Autor:
Şadan Özden
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:9567-9573
The aim of this study is to compare the effects of the molybdenum trioxide (MoO3) used as an interface layer in a p-type Si-based metal–semiconductor (MS) junction with and without this layer. For this purpose, Al/p-Si and Al/MoO3/p-Si devices were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a4e87b0eb230d4dd9cfbff468e7ccd
https://doi.org/10.1007/s10854-021-05619-w
https://doi.org/10.1007/s10854-021-05619-w
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73c9ce755d052fc285557e8914dd571f
https://avesis.kayseri.edu.tr/publication/details/d1665151-f8a8-42db-aed3-6c39e039151e/oai
https://avesis.kayseri.edu.tr/publication/details/d1665151-f8a8-42db-aed3-6c39e039151e/oai
Autor:
Şadan Özden
Publikováno v:
Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 21:531-538
Bu çalışmada GaN tabanlı UV algılayıcı GUVA S12SD Schottky diyotun sıcaklık bağımlı akım – voltaj karakteristikleri seri direnç etkileri yönünden incelenmiştir. Bu amaçla FPGA tabanlı, basit ve düşük maliyetli bir ölçüm sis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4dc5c1646c6cc0ca47ea19adddc80ac
https://doi.org/10.25092/baunfbed.624406
https://doi.org/10.25092/baunfbed.624406
0000-0003-0716-9194 WOS: 000405101700016 In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::574e2f631ff7c99dcab96ca16bce9ac6
https://hdl.handle.net/20.500.12809/1899
https://hdl.handle.net/20.500.12809/1899
Publikováno v:
SOLAR ENERGY
A simple approach, which can estimate the barrier height of non-Ohmic back contacts for CdS/CdTe solar cell by using its temperature dependent forward biased current-voltage data, is explained. The method involves modelling the forward J–V characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b6d007e76a9dc7655d22bc30ce1d9af
http://livrepository.liverpool.ac.uk/3004558/1/HB-manuscript-kd_JM-HB2.docx
http://livrepository.liverpool.ac.uk/3004558/1/HB-manuscript-kd_JM-HB2.docx
Publikováno v:
International Journal of Photoenergy, Vol 2016 (2016)
Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique ontop-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80–3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3dfaa27f28a5161efcfa80f49adee28
https://hdl.handle.net/20.500.12402/2875
https://hdl.handle.net/20.500.12402/2875